ap73t03agmt-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v so-8 compatible with heatsink r ds(on) 9.5m low on-resistance i d 52a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data and specifications subject to change without n otice -55 to 150 thermal data parameter total power dissipation storage temperature range operating junction temperature range 52 -55 to 150 drain current, v gs @ 10v 3 14.4 pulsed drain current 1 160 5 28.8 total power dissipation 41.6 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 drain current (chip), v gs @ 10v 201501063 1 rating halogen-free product 30 + 20 18.1 ap73t03a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resis tance and fast switching performance. it provides the designer with an ext reme efficient device for use in a wide range of power application s. the pmpak ? 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. g d s s s s g pmpak ? ?? ? 5x6 d d d d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 9.5 m v gs =4.5v, i d =20a - - 16 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 40 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 6 9.6 nc q gs gate-source charge v ds =15v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =3.3 - 21 - ns t f fall time v gs =10v - 7 - ns c iss input capacitance v gs =0v - 630 1008 pf c oss output capacitance v ds =15v - 220 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 3.1 6.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 17 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec, 60 o c/w at steady state. 4.starting t j =25 o c , v dd =30v , l=0.1mh , r g =25 , i as =24a. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap73t03agmt-hf
ap73t03agmt-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 0 2 4 6 8 10 12 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c =25 o c 0 20 40 60 80 100 120 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 4 6 8 10 12 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 20 a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 6 12 18 24 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =1ma
ap73t03agmt-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. case temperature 4 0 2 4 6 8 10 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 20 a v ds =15v 0 200 400 600 800 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 20 40 60 80 100 0 1 2 3 4 5 6 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j =-40 o c
ap73t03agmt-hf marking information 5 date code (ywwsss) y last digit of the year ww week sss sequence package code : mt part number meet rohs requirement for low voltage mosfet only 73t03agmt ywwsss
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